EM6A8160TSC-4G Datasheet, PDF (11/53 Pages) Etron Technology, Inc. – 4M x 16 DDR Synchronous DRAM

EtronTech
EM6A8160
Table 12. Absolute Maximum Rating
Symbol
Item
Values
Unit
VI/O ^{Voltage on I/O Pins Relative to Vss}
- 0.5 ~ VDDQ + 0.5
V
VDD, VDDQ ^{Voltage on VDD, VDDQ Supply Relative to Vss}
- 1 ~ 3.6
V
VIN ^{Voltage on Inputs Relative to Vss}
- 1 ~ 3.6
V
TA
Ambient Temperature
0 ~ 70
°C
TSTG ^{Storage Temperature}
- 55 ~ 150
°C
PD
Power Dissipation
1
W
IOS
Short Circuit Output Current
50
mA
Note: Absolute maximum DC requirements contain stress ratings only. Functional operation at the absolute
maximum limits is not implied or guaranteed. Extended exposure to maximum ratings may affect device
reliability.
Table 13. Recommended D.C. Operating Conditions (VDD = 2.5V ± 0.2V, TA = 0~70 °C)
Symbol
VDD
VDDQ
VREF
VTT
VIH (DC)
VIL (DC)
VIN (DC)
Parameter
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
Input Reference Voltage
Termination Voltage
Input High Voltage (DC)
Input Low Voltage (DC)
Input Voltage Level, CK and _CK inputs
Min.
2.3
2.3
0.49* VDDQ
VREF - 0.04
VREF + 0.15
-0.3
-0.3
Max.
2.7
2.7
0.51* VDDQ
VREF + 0.04
VDDQ + 0.3
VREF – 0.15
VDDQ + 0.3
Unit
V
V
V
V
V
V
V
VID (DC)
IIL
IOZ
IOH
IOL
Input Different Voltage, CK and _CK inputs
Input leakage current
Output leakage current
Output High Current (VOH = 1.95V)
Output Low Current (VOL = 0.35V)
0.36
-2
-5
-16.2
16.2
VDDQ + 0.6
V
2
µA
5
µA
-
mA
-
mA
Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 °C)
Symbol
Parameter
CIN1 ^{Input Capacitance (CK,} CK ⁾
CIN2 ^{Input Capacitance (All other input-only pins)}
CI/O ^{DM, DQ, DQS Input/Output Capacitance}
TSOP FBGA TSOP FBGA
Unit
Delta
Min.
Max.
pF
2
1.5
3
2.5 0.25 pF
2
1.5
3
2.5 0.5 pF
4
3.5
5
4.5 0.5 pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested.
Rev. 1.1
11
Oct. /2015