EM639165_07 Datasheet, PDF (1/73 Pages) Etron Technology, Inc. – 8Mega x 16 Synchronous DRAM (SDRAM)

EtronTech
EM639165
8Mega x 16 Synchronous DRAM (SDRAM)
(Rev 1.6, 02/2007)
Features
• ^{Fast access time from clock: 5/5.4 ns}
• ^{Fast clock rate: 166/143 MHz}
• ^{Fully synchronous operation}
• ^{Internal pipelined architecture}
• ^{2M word x 16-bit x 4-bank}
• ^{Programmable Mode registers}
- CAS# Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop function
• ^{Auto Refresh and Self Refresh}
• ^{4096 refresh cycles/64ms}
• ^{CKE power down mode}
• ^{Single +3.3V power supply}
• ^{Interface: LVTTL}
• ^{54-pin 400 mil plastic TSOP II package}
• ^{Lead-free package is available}
Overview
The EM639165 SDRAM is a high-speed CMOS
synchronous DRAM containing 128 Mbits. It is internally
configured as 4 Banks of 2M word x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Read and write
accesses to the SDRAM are burst oriented; accesses
start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command.
The EM639165 provides for programmable Read
or Write burst lengths of 1, 2, 4, 8, or full page, with a
burst termination option. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use.
By having a programmable mode register, the
system can choose the most suitable modes to
maximize its performance. These devices are well suited
for applications requiring high memory bandwidth and
particularly well suited to high performance PC
applications.
Pin Assignment (Top View)
VDD
1
DQ0
2
V DDQ
3
DQ1
4
DQ2
5
VSSQ
6
DQ3
7
DQ4
8
V DDQ
9
DQ5
10
DQ6
11
VSSQ
12
DQ7
13
VDD
14
DQML
15
/W E
16
/CA S
17
/RA S
18
/C S
19
BA0
20
BA1
21
A 1 0 (A P)
22
A0
23
A1
24
A2
25
A3
26
VDD
27
54
VSS
53
DQ15
52
VSSQ
51
DQ14
50
DQ13
49
V DDQ
48
DQ12
47
DQ11
46
VSSQ
45
DQ10
44
DQ9
43
V DDQ
42
DQ8
41
VSS
40
NC
39
DQMU
38
CLK
37
CK E
36
NC
35
A11
34
A9
33
A8
32
A7
31
A6
30
A5
29
A4
28
VSS
Key Specifications
EM639165
tCK3 Clock Cycle time(min.)
tAC3 Access time from CLK(max.)
tRAS Row Active time(min.)
tRC Row Cycle time(min.)
- 6/7
6/7 ns
5/5.4 ns
42/42 ns
60/63 ns
Ordering Information
Part Number
Frequency Package
EM639165TS-6G
166MHz TSOP II
EM639165TS-6LG
166MHz TSOP II
EM639165TS-7G
143MHz TSOP II
EM639165TS-7LG
“L” indicates Low Power.
“G” indicates Lead-free
143MHz TSOP II
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.