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G152B Datasheet, PDF (4/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
Fig 7. Capacitance v.s. Drain-Source Voltage Fig 8. Switching Time v.s. Drain Current
Fig 9. Gate-Source Voltage
v.s. Gate Charge
Fig 10. Reverse Drain-Current
v.s. Source-Drain Voltage
Fig 11. Thermal Resistance
v.s. Pulse Width
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GTM reserves the right to make changes to its products without notice.
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GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
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