English
Language : 

G152B Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th) -0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к) IDSS
-
-
-
V VGS=0, ID=-250uA
-0.1
-
V/к Reference to 25к, ID=-1mA
-
-1.2
V VDS=VGS, ID=-1mA
1.5
-
S VDS=-10V, ID=-0.4A
-
̈́100 nA VGS= ̈́12V
-
-10
uA VDS=-20V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
135 300
VGS=-4.5V, ID=-0.4A
mÓ¨
192 500
VGS=-2.5V, ID=-0.4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
5.2 10
ID=-0.7A
-
1.36
-
nC VDS=-10.0V
-
0.6
-
VGS=-6.0V
-
5
-
-
20
-
VDD=-10V
ns ID=-0.4A
-
55
-
VGS=-5V
-
70
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
180
-
-
120
-
-
60
-
VGS=0V
pF VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
-1.1
Unit
Test Conditions
V IS=-0.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270к/W when mounted on min. copper pad.
2/4
 ▷