G152B Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
G152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
0.3
-0.7A
Description
The G152B provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Ô¦Low On-State Resistance:0.3Ó¨(max)
Ô¦Ultra High Speed Switching
Applications
Ô¦Notebook PCs
Ô¦Cellular and portable phones
Ô¦On-board power supplies
Ô¦Li-ion battery System
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Pulsed Drain Current^1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Ratings
-20
f12
-0.7
-2.8
0.5
0.01
-55 ~ +150
Ratings
90
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Unit
V
V
A
A
W
W/ć
ć
Unit
ć/W
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