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SEN01G64D1BF1SA-25R Datasheet, PDF (8/14 Pages) List of Unclassifed Manufacturers – 1GB DDR2 – SDRAM SO-DIMM
Data Sheet
Rev.1.2 12.12.2010
Parameter
& Test Condition
max
Symbol
5300-555 6400-666
OPERATING WRITE CURRENT:
All device banks open, Continuous burst writes; One
module rank active; BL = 4, CL = CL (IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP (IDD);
CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are changing once every two clock
cycles; DQ inputs changing once per clock cycle
BURST REFRESH CURRENT:
tCK = tCK (IDD); refresh command at every tRFC (IDD)
interval, CKE is HIGH, CS# is HIGH between valid
commands; All other Control and Address bus inputs
are changing once every two clock cycles; DQ inputs
changing once per clock cycle
SELF REFRESH CURRENT:
CK and CK# at 0V; CKE ≤ 0.2V; All other Control and
Address bus inputs are floating at VREF; DQ’s are
floating at VREF
OPERATING CURRENT *) :
Four device bank interleaving READs, IOUT = 0mA; BL = 4,
CL = CL (IDD), AL = tRCD (IDD) – 1 x tCK (IDD); tCK = tCK
(IDD), tRC = tRC (IDD), tRRD = tRRD (IDD), tRCD = tRCD (IDD);
CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are not changing during
DESELECT; DQ inputs changing once per clock cycle
IDD4W
IDD5
IDD6
IDD7
480
800
80
1160
536
840
80
1280
*) Value calculated as one module rank in this operating condition, and all other module ranks in
IDD2P (CKE LOW) mode.
Unit
mA
mA
mA
mA
TIMING VALUES USED FOR IDD MEASUREMENT
IDD MEASUREMENT CONDITIONS
SYMBOL
5300-555
6400-666
CL (IDD)
5
6
tRCD (IDD)
15
15
tRC (IDD)
60
60
tRRD (IDD)
7.5
7.5
tCK (IDD)
3.0
2.5
tRAS MIN (IDD)
45
45
tRAS MAX (IDD)
tRP (IDD)
tRFC (IDD)
70’000
15
127
70’000
15
127
Unit
tCK
ns
ns
ns
ns
ns
ns
ns
ns
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