AUIRF1405ZS Datasheet, PDF (6/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF1405ZS/L
150
125
100
75
50
25
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
2.5
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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