AUIRF1405ZS Datasheet, PDF (5/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF1405ZS/L
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
12.0
10.0
ID= 75A
8.0
VDS= 44V
VDS= 28V
6.0
4.0
2.0
0.0
0
20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
nce
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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