AT45DB321E Datasheet, PDF (47/72 Pages) List of Unclassifed Manufacturers – 32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory

18.3 DC Characteristics
Symbol Parameter
Condition
Min
Typ
Max Units
I_UDPD
I_DPD
Ultra-Deep Power-Down Current All inputs at 0V or V_CC
Deep Power-Down Current
CS, RESET, WP = V_IH
All inputs at CMOS levels
0.4
1
μA
5
12
μA
I_SB
Standby Current
CS, RESET, WP = V_IH
All inputs at CMOS levels
25
50
μA
I_CC1
I_CC2(1)(2)
I_CC3
Active Current, Low Power Read ^{f = 1MHz; IOUT = 0mA; VCC = 3.6V}
(01h) Operation
f = 15MHz; I_OUT = 0mA; V_CC = 3.6V
Active Current,
Read Operation
f = 50MHz; I_OUT = 0mA; V_CC = 3.6V
f = 85MHz; I_OUT = 0mA; V_CC = 3.6V
Active Current,
Program Operation
CS=V_CC
6
9
mA
7
11
mA
12
17
mA
16
22
mA
12
18
mA
I_CC4
Active Current,
Erase Operation
CS=V_CC
12
18
mA
I_LI
Input Load Current
All inputs at CMOS levels
I_LO
Output Leakage Current
All inputs at CMOS levels
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL
Output Low Voltage
I_OL = 100μA
V_OH
Output High Voltage
I_OH = -100μA
Notes: 1. Typical values measured at 3.0V at 25C.
2. I_CC2 during a Buffer Read is 20mA maximum @ 20MHz.
V_CC x 0.7
V_CC - 0.2V
1
μA
1
μA
V_CC x 0.3
V
V_CC + 0.6
V
0.4
V
V
AT45DB321E 47
8784E–DFLASH–10/2013