AT45DB321E Datasheet, PDF (1/72 Pages) List of Unclassifed Manufacturers – 32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory

AT45DB321E
32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum
SPI Serial Flash Memory
Features
 Single 2.3V - 3.6V supply
 Serial Peripheral Interface (SPI) compatible
 Supports SPI modes 0 and 3
 Supports RapidS^™ operation
 Continuous read capability through entire array
 Up to 85MHz
 Low-power read option up to 15MHz
 Clock-to-output time (t_V) of 6ns maximum
 User configurable page size
 512 bytes per page
 528 bytes per page (default)
 Page size can be factory pre-configured for 512 bytes
 Two fully independent SRAM data buffers (512/528 bytes)
 Flexible programming options
 Byte/Page Program (1 to 512/528 bytes) directly into main memory
 Buffer Write
 Buffer to Main Memory Page Program
 Flexible erase options
 Page Erase (512/528 bytes)
 Block Erase (4KB)
 Sector Erase (64KB)
 Chip Erase (32-Mbits)
 Program and Erase Suspend/Resume
 Advanced hardware and software data protection features
 Individual sector protection
 Individual sector lockdown to make any sector permanently read-only
 128-byte, One-Time Programmable (OTP) Security Register
 64 bytes factory programmed with a unique identifier
 64 bytes user programmable
 Hardware and software controlled reset options
 JEDEC Standard Manufacturer and Device ID Read
 Low-power dissipation
 400nA Ultra-Deep Power-Down current (typical)
 3μA Deep Power-Down current (typical)
 25μA Standby current (typical)
 11mA Active Read current (typical)
 Endurance: 100,000 program/erase cycles per page minimum
 Data retention: 20 years
 Green (Pb/Halide-free/RoHS compliant) packaging options
 8-lead SOIC (0.208" wide)
 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)
8784E–DFLASH–10/2013