RFM110W Datasheet, PDF (4/22 Pages) List of Unclassifed Manufacturers – Low-Cost Consumer Electronics Applications

RFM110W/RFM117W
1. Electrical Characteristics
V_DD = 3.3 V, T_OP = 25 ℃, F_RF = 433.92 MHz, output power is +10 dBm terminated in a matched 50 Ω impedance, unless
otherwise noted.
1.1 Recommended Operating Conditions
Table 3. Recommended Operation Conditions
Parameter
Operation Voltage Supply
Operation Temperature
Supply Voltage Slew Rate
Symbol
V_DD
T_OP
Conditions
Min
Typ
1.8
-40
1
Max
Unit
3.6
V
85
℃
mV/us
1.2 Absolute Maximum Ratings
Table 4. Absolute Maximum Ratings^[1]
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
Interface Voltage
Junction Temperature
Storage Temperature
Soldering Temperature
V_DD
V_IN
T_J
T_STG
T_SDR
Lasts at least 30 seconds
-0.3
3.6
V
-0.3
V_DD + 0.3
V
-40
125
℃
-50
150
℃
255
℃
ESD Rating
Latch-up Current
Human Body Model (HBM)
@ 85 ℃
-2
2
kV
-100
100
mA
Note:
[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Caution! ESD sensitive device. Precaution should be used when handling the device in order
to prevent permanent damage.
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