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| FMV30N60S1 Datasheet, PDF (4/8 Pages) List of Unclassifed Manufacturers – Super J-MOS series | |||
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FMV30N60S1
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
0.40
0.35
0.30
0.25
0.20
max.
0.15
0.10
typ.
0.05
0.00
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V
100
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
3
typ.
2
1
0
-50
100
-25 0
25 50 75 100 125 150
Tch [°C]
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V
10
1
150â
Tch=25â
0.1
0.01
Tch=25â
10
150â
1
1E-3
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test
100
0.1
0.1
105
104
10
103
150â
Tch=25â
102
1
101
100
0.1
10-1
0.0
0.5
1.0
1.5
2.0
10-2
VSD [V]
4
1
10
100
ID [A]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
Coss
Crss
10-1
100
101
102
VDS [V]
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