FMV30N60S1 Datasheet, PDF (3/8 Pages) List of Unclassifed Manufacturers – Super J-MOS series

FMV30N60S1
100
90
80
70
60
50
40
30
20
10
0
0
100
80
60
Allowable Power Dissipation
PD=f(Tc)
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
20V
10V
8V
7V
6.5V
6V
40
5.5V
20
5V
0
0
0.50
0.45
VGS=4.5V
5
10
15
20
25
VDS [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
5V 5.5V
6V
0.40
0.35
7V
0.30
8V _10V
0.25
0.20
0.15
VGS=20V
0.10
0.05
0.00
0
20
40
60
80
100
ID [A]
3
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25°C
10²
t=
1µs
10µs
10¹
100µs
10⁰
1ms
10^-1
Power loss waveform :
Square waveform
P_D
t
10^-2
10^-1
10⁰
10¹
10²
10³
VDS [V]
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=150°C
60
10V ^20V
50
8V
6V
40
5.5V
30
20
5V
10
VGS=4.5V
0
0
5
10
15
20
25
VDS [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=150°C
1.0
4.5V
5V
0.9
0.8
5.5V
0.7
0.6
6V _8V
10V
0.5
0.4
VGS=20V
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
ID [A]