FMV30N60S1 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – Super J-MOS series

FMV30N60S1
Super J-MOS series
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by Rg)
Outline Drawings [mm]
TO-220F(SLS)
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Connection
1 Gate
2 Drain
3 Source
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Symbol
VDS
VDSX
Continuous Drain Current
ID
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
IDP
VGS
IAR
EAS
dVDS/dt
dV/dt
-di/dt
Maximum Power Dissipation
PD
Tch
Operating and Storage Temperature range
Tstg
Isolation Voltage
Viso
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C.
Characteristics
600
600
±30
±19
±90
±30
6.6
849.2
50
12
100
2.16
90
150
-55 to +150
2
Electrical Characteristics at TC=25°C (unless otherwise specified)
• Static Ratings
Description
Symbol Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Gate resistance
IGSS
RDS(on)
RG
ID=250μA
VGS=0V
ID=250μA
VDS=VGS
VDS=600V
VGS=0V
VDS=480V
VGS=0V
VGS= ±30V
VDS=0V
ID=15A
VGS=10V
f=1MHz, open drain
Tch=25°C
Tch=125°C
min.
600
2.5
-
-
-
-
-
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
kVrms
Remarks
VGS=-30V
Tc=25°C Note*1
Tc=100°C Note*1
Note *2
Note *3
VDS≤ 600V
Note *4
Note *5
Ta=25°C
Tc=25°C
t=60sec,f=60Hz
typ.
-
3.0
-
-
10
0.106
3.2
max.
-
3.5
25
250
100
0.125
-
Unit
V
V
μA
nA
Ω
Ω
1
07947
May 2012