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| TIP29 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W) | |||
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TIP29, 30
High Power Bipolar Transistor
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol Minimum Maximum
Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 30mA, IB = 0)
TIP29A, TIP30A
VCEO(sus)
60
-
V
TIP29C, TIP30C
100
Collector Cut off Current
(VCE = 30V, IB = 0)
(VCE = 60V, IB = 0)
TIP29A, TIP30A
TIP29C, TIP30C
ICEO
-
0.3
Collector Cut off Current
(VCE = 60V, VEB = 0) TIP29A, TIP30A
(VCE = 100V, VEB = 0) TIP29C, TIP30C
ICES
-
mA
0.2
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
IEBO
-
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.2A, VCE = 4.0V)
(IC = 1.0A, VCE = 4.0V)
Collector-Emitter Saturation Voltage
(IC = 1.0A, IB = 125mA)
hFE
40
15
VCE(sat)
-
Base-Emitter On Voltage
(IC = 1.0A, VCE = 4.0V)
VBE(on)
-
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product (2)
(IC = 200mA, VCE = 10V, f = 1MHz)
fT
3.0
Small Signal Current Gain
(IC = 200mA, VCE = 10V, f = 1kHz)
hfe
20
(1) Pulse Test: Pulse Width â¤300µs, Duty Cycle â¤2.0%.
(2) fT = hFE ⢠fTEST.
1.0
-
75
-
0.7
V
1.3
-
MHz
-
-
Page 3
31/05/05 V1.0
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