TIP29 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

TIP29, 30
High Power Bipolar Transistor
Features:
• Collector-Emitter sustaining voltage-
V_CEO(sus) = 60V (Minimum) - TIP29A, TIP30A
= 100V (Minimum) - TIP29C, TIP30C.
• Collector-Emitter saturation voltage-
V_CE(sat) = 0.7V (Maximum) at I_C = 1.0A.
• Current gain-bandwidth product f_T = 3.0MHz (Minimum) at I_C = 200mA.
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case).
Dimensions Minimum Maximum
A
14.68
15.31
B
9.78
10.42
C
5.01
6.52
D
13.06
14.62
E
3.57
4.07
F
2.42
3.66
G
1.12
1.36
H
0.72
0.96
I
4.22
4.98
J
1.14
1.38
K
2.20
2.97
L
0.33
0.55
M
2.48
2.98
O
3.70
3.90
Dimensions : Millimetres
NPN
TIP29A
TIP29C
PNP
TIP30A
TIP30C
1.0 Ampere
Complementary Silicon
Power Transistors
40 - 100 Volts
30 Watts
TO-220
Page 1
31/05/05 V1.0