TIP29 Datasheet, PDF (2/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

TIP29, 30
High Power Bipolar Transistor
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation at T_C = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_D
T_J, T_STG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
4.167
TIP29A
TIP30A
60
TIP29C
TIP30C
100
5.0
1.0
3.0
0.4
30
0.24
-65 to +150
Unit
°C/W
Unit
V
A
W
W/°C
°C
Figure - 1 Power Derating
Page 2
31/05/05 V1.0