5962-8853801VGA Datasheet, PDF(3/14 Page) List of Unclassifed Manufacturers – MICROCIRCUIT, LINEAR, DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERS MONOLITHIC SILICON

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5962-8853801VGA Datasheet, PDF (3/14 Pages) List of Unclassifed Manufacturers – MICROCIRCUIT, LINEAR, DUAL PRECISION JFET-INPUT OPERATIONAL AMPLIFIERS MONOLITHIC SILICON

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1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter

Descriptive designator

Terminals

Package style

MACY1-X8

GDIP1-T8 or CDIP2-T8

CQCC1-N20

Can

Dual-in-line

Square leadless chip carrier

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,

appendix A for device class M.

1.3 Absolute maximum ratings. 1/

Supply voltage (VS) ......................................................................................... ï±22 V

Differential input voltage ................................................................................. ï±40 V

Input voltage (VIN) .......................................................................................... ï±20 V 2/

Output short-circuit duration ............................................................................ Indefinite

Internal power dissipation (PD) ....................................................................... 500 mW 3/

Junction temperature (TJ) ............................................................................... +150ï°C

Storage temperature range .............................................................................. -65ï°C to +150ï°C

Lead temperature (soldering, 60 seconds) ...................................................... +300ï°C

Thermal resistance, junction-to-case (ï±JC) ..................................................... See MIL-STD-1835

1.4 Recommended operating conditions.

Supply voltage (VS) ......................................................................................... ï±15 V

Ambient operating temperature (TA) ............................................................... -55ï°C to +125ï°C

1.5 Radiation features.

Maximum total dose available (dose rate = 50 - 300 rad(Si)/s) ....................... 100 krads(Si) 4/

_____

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.

3/ For case outline G at TA ï¾ 80ï°C, derate linearly at 7.1 mW/ï°C. For case outline P at TA ï¾ 75ï°C, derate linearly at

6.7 mW/ï°C. For case 2 at TA ï¾ 80ï°C, derate linearly at 7.5 mW/ï°C.

4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate

effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in

MIL-STD-883, method 1019, condition A.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-88538

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