TC1202 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Super Low Noise GaAs FETs

TC1202
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_DS
Drain Current
I_GS
Gate Current
5V
-3.0 V
I_DSS
300 µA
P_in
RF Input Power, CW
17 dBm
P_T
Continuous Dissipation
300 mW
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 4 V, I_DS = 25 mA
Frequency
(GHz)
NF_opt
(dB)
G_A
(dB)
Γ_opt
MAG ANG
Rn/50
2
0.31
20.6
0.90
10 0.64
4
0.37
17.2
0.81
20 0.45
6
0.41
14.8
0.74
37 0.35
8
0.47
13.1
0.69
57 0.29
10
0.52
12.1
0.64
77 0.24
12
0.58
11.4
0.58
95 0.20
14
0.71 10.8 0.55 113 0.16
16
0.88 10.4 0.52 130 0.11
18
1.04
9.9
0.51 151 0.08
CHIP DIMENSIONS
280 ± 12
D
S
S
G
290 ± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 55 x 60
Drain Pad: 55 x 60
Source Pad: 55 x 169
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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