TC1202 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Super Low Noise GaAs FETs

TRANSCOM
TC1202
January 2002
Super Low Noise GaAs FETs
FEATURES
• Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
Ga = 12 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 300 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable
for low noise application including a wide range of commercial and military applications. All devices are
100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression
or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
NF
Noise Figure at V_DS = 4 V, I_DS = 25 mA_, f = 12GHz
G_a
I_DSS
g_m
V_P
BV_DGO
R_th
Associated Gain at V_DS = 4 V, I_DS = 25 mA, f = 12GHz
Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
Transconductance at V_DS = 2 V, V_GS = 0 V
Pinch-off Voltage at V_DS = 2 V, I_D = 0.6 mA
Drain-Gate Breakdown Voltage at I_DGO =0.15 mA
Thermal Resistance
MIN
11
5
TYP
0.5
12
90
100
-1.0
8
43
MAX
0.7
UNIT
dB
dB
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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