AT25BCM512B_12 Datasheet, PDF (1/34 Pages) List of Unclassifed Manufacturers – 512-Kilobit 2.7-volt Minimum SPI Serial Flash Memory

Features
• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 70 MHz Maximum Operating Frequency
– Clock-to-Output (t_V) of 6 ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Full Chip Erase
• Hardware Controlled Locking of Protected Sectors via WP Pin
• 128-Byte Programmable OTP Security Register
• Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
• Fast Program and Erase Times
– 2.5 ms Typical Page Program (256 Bytes) Time
– 100 ms Typical 4-Kbyte Block Erase Time
– 500 ms Typical 32-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 6 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
1. Description
The AT25BCM512B is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25BCM512B, with its erase granularity as small as
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
The erase block sizes of the AT25BCM512B have been optimized to meet the needs
of today's code and data storage applications. By optimizing the size of the erase
blocks, the memory space can be used much more efficiently. Because certain code
modules and data storage segments must reside by themselves in their own erase
regions, the wasted and unused memory space that occurs with large sectored and
large block erase Flash memory devices can be greatly reduced. This increased
memory space efficiency allows additional code routines and data storage segments
to be added while still maintaining the same overall device density.
The device also contains a specialized OTP (One-Time Programmable) Security Reg-
ister that can be used for purposes such as unique device serialization, system-level
Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in 3-volt systems, the AT25BCM512B supports read,
program, and erase operations with a supply voltage range of 2.7V to 3.6V. No sepa-
rate voltage is required for programming and erasing.
512-Kilobit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25BCM512B
Preliminary
3704BX–DFLASH–11/2012