HX6656 Datasheet, PDF (5/12 Pages) List of Unclassifed Manufacturers – 32K x 8 ROM-SOI

HX6656
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IDDSB1 Static Supply Current
Typical Worst Case (2)
(1) Min Max
Units
1.5 mA
IDDSBMF Standby Supply Current - Deselected
1.5 mA
IDDOPR Dynamic Supply Current, Selected
4.0 mA
II
Input Leakage Current
-1 +1 µA
IOZ
Output Leakage Current
-1 +1 µA
VIL
Low-Level Input Voltage
CMOS
TTL
0.3xVDD V
0.8 V
Test Conditions
VIH=VDD IO=0
VIL=VSS Inputs Stable
NCS=VDD, IO=0,
f=40 MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS
VSS≤VI≤VDD
VSS≤VIO≤VDD
Output=high Z
VDD = 4.5V
VIH
High-Level Input Voltage
CMOS
TTL
0.7xVDD
2.2
V
V
VDD = 5.5V
VOL
Low-Level Output Voltage
0.4
V
VDD = 4.5V, IOL = 10 mA
0.05
V
VDD = 4.5V, IOL = 200 µA
VOH
High-Level Output Voltage
4.2
VDD-0.05
V
VDD = 4.5V, IOH = -5 mA
V
VDD = 4.5V, IOH = -200 µA
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
DUT
output
2.9 V
249Ω
+
Vref1 -
Vref2 +
-
Valid high
output
Valid low
output
CL >50 pF*
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
Tester Equivalent Load Circuit
5