P-51 Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – Peripheral 8051 System on a Chip

P-51
VDD
Physical
Specifications
A Peripheral Device
The P-51 name is a reminder that this device is a Peripheral
8051 processor, not a standalone processor. The name P-51
focuses on this unique aspect of the device: A peripheral
8051 requires a host to which it is peripheral.
100 PIN QUAD
FLAT PKG
(Gull-Leads)
GND
GND
A 14.0 mm +0.4
B 12.0
+0.1
GND
GND
GND
C 1.4 typ 1.7 max ^GND
D 0.5
E 0.18
F 12.18
G 1.0 typ
J 0.5
+0.2
VDD
Clock Circuits
An external Clock
Oscillator between 1
and 60 MHz is used
on XTAL1, and must
use the same VDD
voltage as the P-51.
XTAL2
P- 51
XTAL1
+3.3V
CRYSTAL
OSCILLATOR
1-60 MHz
Crystal Oscillator Circuit
G
C
JJ
A
B
D
E
F
E
F
A
B
C
D
The frequency range
for the Crystal circuit
is 4 to 51 MHz. The
XTAL2
0-200 W ^5-30pF
circuitry differs for
fundamental vs. third-
overtone crystals.
The boundary
P- 51
XTAL1
1M W
XTAL
<26 MHz
between the two
5-30pF
E
types is approx 26
F
MHz (consult crystal ^{Fundamental Crystal Circuit}
manufacturer specs).
100 PIN
SQUARE QUAD FLAT PKG
PCB PAD LAYOUT
mm
A 17.52
B 14.48
C 12.23
D 0.50
E 1.52
F 1.125
G 12.00
H 16.00
J 2.00
PAD 1.52x0.23
inch
A 0.690
B 0.569
C 0.481
D 0.01969
E 0.0598
F 0.0443
G 0.472
H 0.630
J 0.079
PAD 0.060x0.009
Like standard 8051
devices, the internal
P-51 serial baud rates
assume an 11.059
MHz clock and
multiples thereof.
XTAL2
0-200 W
5-30pF
P- 51
XTAL1
1M W
XTAL
>26 MHz
5-30pF
0.01uF
3.3uH
Third Overtone Crystal Circuit
Sym Parameter
Min Typ Max Unit Remarks
Icc pwr supply current
46 80 mA 60 MHz
J
G
J
20 40 mA 40 MHz
H
16 35 mA 11 MHz
Electrical Specifications
Vih input high voltage 2.0
Vil input low voltage -0.2
5.5 V
0.8 V
5 Volt tolerant inputs,
TTL compatible
TTL compatible
Iih input high current -10
Absolute Maximum Ratings:
Iil input low current
-10
Ambient Temperature under bias .. 0ºC to 70ºC
Voh output high voltage 2.4
Storage Temperature.....................–55ºC to +125ºC _{Vol output low voltage}
Vdd Supply Voltage.......................–0.3V to +4.0V
Voltage on any I/O pin from GND..–0.3V to +6.0V
Power Dissipation..........................500 mW
Ioz
Tri-state leakage
current
10
+10 uA
+10 uA
V
0.4 V
0.4 V
+10 uA
Vin = Vdd
Vin = GND
Ioh = -4 mA
Iol = 4 mA
Iol = 8 mA on IoChRdy
Vin = GND to Vdd
DC and Operating Characteristics:
Ipu Pull-up current
22 66 160 uA Vin = GND, R ~ 50K_W
Temperature Range....................... 0ºC to 70ºC
Fcy crystal frequency
4
51 MHz see clock circuits
Vdd Supply Voltage.......................+3.0V to +3.6V ^{Fos oscillator frequency 1}
60 MHz see clock circuits
20APR2000
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