H4005 Datasheet, PDF (3/6 Pages) List of Unclassifed Manufacturers – ISO 11 784 / 11 785 COMPLIANT READ ONLY CONTACTLESS IDENTIFICATION DEVICE

EM MICROELECTRONIC-MARIN SA
H4005
Electrical Characteristics
VDD = 1.5 V VSS = 0 V fcoil = 134 kHz Sine wave Top = 25°C
VC1 = 1.0 V with positive peak at VDD and negative peak at VDD - 1 V
unless otherwise specified
Parameter
Supply Voltage
Symbol Test Conditions
VDD
Min. Typ.
1.5
Supply Current
IDD
Rectified Supply Voltage
VDD VC2 -VC1 = 2.8 VDC Modulator Switch = "ON" 1.5
C2 pad Modulator ON
voltage drop
VONC2 VDD = 1.5V IVDDC2 = 100 µA with ref. to VDD
0.9
VDD = 5.0V IVDDC2 = 1 mA with ref. to VDD
2.1
C1 pad Modulator ON
voltage drop
VONC1 VDD = 5.0V IVDDC1 = 1 mA with ref. to VDD
2.1
Coil1 - Coil2 capacitance
Cres Vcoil = 100 mVRMS f = 10 kHz
75 2)
Power Supply Capacitor
Csup
150
1) The maximum voltage is defined by forcing 10 mA on C1 - C2
2) The toleranceof the resonant capacitor is ± 15 % over the whole production. On a wafer basis and on process statistics, the tolerance is ± 2%
Timing Characteristics
VDD = 1.5 V VSS = 0 V fcoil = 134 kHz Sine wave Top = 25°C
VC1 = 1.0 V with positive peak at VDD and negative peak at VDD - 1 V
unless otherwise specified
Timings are derived from the field frequency and are specified as a number of RF periods.
Parameter
Symbol Test Conditions
Value
Max. Units
1)
V
1.5 µA
V
1.3
V
3.0
V
3.0
V
pF
pF
Table 3
Units
Read Bit Period
trdb
Timing Waveforms
TOC
32 T _OC
32
RF periods
Table 4
Fig. 4
COIL1
Serial Data Out
BIT n
BIT n+1
BIT n+2
Binary Data
0
1
1
0
1
0
0
1
Memory Output
Modulator Output
3