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U635H64 Datasheet, PDF (7/13 Pages) List of Unclassifed Manufacturers – POWER STORE 8K X 8 NVSRAM
Nonvolatile Memory Operations
U635H64
Mode Selection
E
W
A12 - A0
(hex)
Mode
I/O
H
X
X
L
H
X
Not Selected
Read SRAM
Output High Z
Output Data
L
L
X
Write SRAM
Input Data
L
H
L
H
0000
1555
0AAA
1FFF
10F0
0F0F
0000
1555
0AAA
1FFF
10F0
0F0E
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile STORE
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile RECALL
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Power
Standby
Active
Active
Active
Active
Notes
m
k, l
k, l
k, l
k, l
k, l
k
k, l
k, l
k, l
k, l
k, l
k
k: The six consecutive addresses must be in order listed (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a Store cycle or
(0000, 1555, 0AAA, 1FFF,10F0, 0F0E) for a RECALL cycle. W must be high during all six consecutive cycles.
See STORE cycle and RECALL cycle tables and diagrams for further details.
The following six-address sequence is used for testing purposes and should not be used: 0000, 1555, 0AAA, 1FFF, 10F0, 139C.
l: Activation of nonvolatile cycles does not depend on the state of G.
m: I/O state assumes that G ≤ VIL.
No.
PowerStore
Power Up RECALL
24 Power Up RECALL Durationn, e
Symbol
Alt.
IEC
tRESTORE
25 STORE Cycle Durationf
tPDSTORE
26
Time allowed to Complete SRAM Cyclef,
e
tDELAY
Conditions
Min.
the power supply vol-
tage must stay above
3.6 V for at least
10 ms after the start
of the STORE
operation
Max.
650
10
1
Unit
µs
ms
µs
Low Voltage Trigger Level
VSWITCH
4.0 4.5
V
n: tRESTORE starts from the time VCC rises above VSWITCH.
April 7, 2005
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