N04L163WC1C Datasheet, PDF (7/10 Pages) List of Unclassifed Manufacturers – 4Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions, Inc.
N04L163WC1C
Advance Information
Data Retention Characteristics
Parameter
Description
Condition
Min Typ Max Unit
V_DR
Vcc for Data Retention
1.5
I_CCDR
Data Retention Current
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V
-L
t_CDR
Chip Deselect to Data
Retention Time
0
t_R
Operation Recovery Time
t_RC
V
9
µA
6
ns
ns
Data Retention Waveform
Vcc
CE or
LB/UB
Vcc(min)
t_CDR
Data Retention Mode
VDR ≥ 1.5V
Vcc(min)
t_R
Stock No. 23373-C 1/05
7
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.