N04L163WC1C Datasheet, PDF (4/10 Pages) List of Unclassifed Manufacturers – 4Mb Ultra-Low Power Asynchronous CMOS SRAM

NanoAmp Solutions, Inc.
N04L163WC1C
Advance Information
Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
0.1V_CC to 0.9 V_CC
1V/ns
0.5 V_CC
CL = 50pF
-40 to +85 ^oC
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
Symbol
t_RC
t_AA
t_CO
t_OE
t_LB, t_UB
t_LZ
t_OLZ
t_LBZ, t_UBZ
t_HZ
t_OHZ
t_LBHZ, t_UBHZ
t_OH
-55
Min.
Max.
55
55
55
25
55
10
5
10
0
20
0
20
0
20
10
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
t_WC
55
t_CW
40
t_AW
40
t_LBW, t_UBW
40
t_WP
40
t_AS
0
t_WR
0
t_WHZ
20
t_DW
25
t_DH
0
t_OW
10
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from V_DR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23373-C 1/05
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.