CS18LV20483 Datasheet, PDF (6/16 Pages) List of Unclassifed Manufacturers – High Speec Super Low Power SRAM

High Speed Super Low Power SRAM
256K-Word By 8 Bit
CS18LV20483
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70^oC , Vcc = 3.0V )
Parameter
Name
Parameter
Test Conduction MIN TYP⁽¹⁾ MAX Unit
V_IL
Guaranteed Input Low
Voltage ⁽²⁾
-0.5
0.8
V
V_IH
Guaranteed Input High
Voltage ⁽²⁾
2.0
Vcc+0.2 V
I_IL
Input Leakage Current V_CC=MAX, V_IN=0 to V_CC
-1
I_OL
Output Leakage
V_CC=MAX, /CE=V_IN, or
-1
Current
/OE=V_IN , V_IO=0V to V_CC
1
uA
1
uA
V_OL
Output Low Voltage V_CC=MAX, I_OL = 2mA
0.4
V
V_OH
I_CC
Output High Voltage V_CC=MIN, I_OH = -1mA
2.4
Operating Power
/CE=V_IL, I_DQ=0mA, F=F_MAX(3)
Supply Current
V
25 mA
I_CCSB Standby Supply - TTL /CE=VIH, IDQ=0mA,
I_CCSB1 Standby Current
/CE≧V_CC-0.2V, V_IN≧
-CMOS
V_CC-0.2V or V_IN≦0.2V
1. Typical characteristics are at TA = 25^oC.
1
mA
0.5
4
uA
2. These are absolute values with respect to device ground and all overshoots due to system or
tester notice are included.
3. Fmax = 1/t_RC.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70^oC)
Parameter Name
Parameter
Test Conduction MIN TYP MAX Unit
V_DR
I_CCDR
V_CC for Data Retention /CE≧V_CC-0.2V,
1.5
V
V_IN≧V_CC-0.2V or V_IN≦0.2V
Data Retention Current /CE≧V_CC-0.2V, V_CC=1.5V
V_IN≧V_CC-0.2V or V_IN≦0.2V
0.3
2
uA
Chip Deselect to Data
T_CDR
Retention Time
0
ns
See Retention Waveform
Operation Recovery
t_R
Time
t_RC (1)
ns
1. Read Cycle Time.
6
Rev. 1.0
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