CS18LV02565 Datasheet, PDF (6/14 Pages) List of Unclassifed Manufacturers – HIGH SPEED SUPER LOW POWER SRAM

High Speed Super Low Power SRAM
32K-Word By 8 Bit
CS18LV02565
DC ELECTRICAL CHARACTERISTICS ( TA = 0^o ~70^oC, Vcc = 5.0V)
Name
Parameter
Test Condition
MIN TYP⁽¹⁾ MAX Unit
Guaranteed Input Low
V_IL
Voltage ⁽²⁾
Vcc=5.0V
-0.5
1.5
V
Guaranteed Input High
V_IH
Voltage ⁽²⁾
Vcc=5.0V
2.5
Vcc+0.2 V
I_IL
Input Leakage Current
V_CC=MAX, V_IN=0 to V_CC
-1
1
uA
V_CC=MAX, /CE=V_IN, or
I_OL ^{Output Leakage Current}
-1
/OE=V_IN , V_IO=0V to V_CC
1
uA
V_OL ^{Output Low Voltage}
V_CC=MAX, I_OL = 1mA
0.4
V
V_OH ^{Output High Voltage}
V_CC=MIN, I_OH = -1mA
2.2
V
Operating Power Supply
I_CC
Current
/CE=V_IL, I_DQ=0mA,
F=F_MAX =1/ t_RC
20 mA
I_CCSB ^{TTL Standby Supply}
I_CCSB1 ^{CMOS Standby Current}
/CE=V_IH, I_DQ=0mA,
/CE≧V_CC-0.2V, V_IN≧
V_CC-0.2V or V_IN≦0.2V,
1
mA
1.0
4
uA
1. Typical characteristics are at TA = 25^oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
DATA RETENTION CHARACTERISTICS ( TA = 0^o ~70^oC, Vcc = 5.0V )
Name
Parameter
Test Condition
MIN TYP⁽¹⁾ MAX
V_CC for Data Retention
V_DR
/CE ≧ V_CC-0.2V, V_IN ≧
1.5
V_CC-0.2V or V_IN≦0.2V
I_CCDR
Data Retention Current
/CE≧V_CC-0.2V, V_IN≧
V_CC-0.2V or V_IN≦0.2V
0.5
3
T_CDR
Chip Deselect to Data
Retention Time
t_R
Operation Recovery Time
1. TA = 25^oC.
Refer to
Retention Waveform
0
t_RC (2)
2. t_{RC= .}Read Cycle Time.
Unit
V
uA
ns
ns
6
Rev. 2.0
Chiplus reserves the right to change product or specification without notice.