SMCTTA32N14A10 Datasheet, PDF (5/5 Pages) List of Unclassifed Manufacturers – Advanced Pulse Power Device N-MOS VCS, ThinPakTM

SMCT TA32N14A10
Advanced Pulse Power Device
N-MOS VCS, ThinPak^TM
Application Notes
A1. Junction Temperature Calculation
The figure below shows a lump model of the thermal properties of the size 4 thinPak packaged VCS, from the 2-mil solder
on the top of the lid on the left to the 2-mil solder on the bottom of the device on the right. By adding the user's lump model
of the rest of the thermal system the user can calculate the junction and case temperature rise under any operating
condition.
Cathode-Gate
(Top) Side
Interface
Device
Junction
Anode
(Bottom) Side
Interface
A2. Calculation of Pulses to Failure for Intermediate/Long Pulse Widths
The user may calculate the Number of Pulses to failure (N_F) for long to intermedeiate pulse widths (not covered in the
typical performance curve section) by applying the junction temperature rise (dT), calculated as described in A1, to the
formula N_F=(300/dT)9 .
A3. Use of Gate Return Bond Area.
The MCT was designed for high di/dt applications. An independent cathode connection or "Gate Return Bond Area" was
provided to minimize the effects of rapidly changing Anode-Cathode current on the Gate control voltage, (V=L*di/dt). It is
therefore, critcal that the user utilize the Gate Return Bond Area as the point at which the gate driver reference (return) is
attached to the VCS device.
Packaging and Handling
1. All metal surfaces are tinned using 63pb/37sn
solder.
2. Installation reflow temperature should not exceed
260^oC or internal package degradation may result.
3. Package may be cooled from either top or bottom
(See Figures 7 & A1 Application Notes.)
4. As with all MOS gated devices, proper handling
procedures must be observed to prevent electrostatic
discharge which may result in permanent damage to
the gate of the device
Package Dimensions
Top
Cathode-Gate
Bottom
Anode
Side