SMCTTA32N14A10 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Advanced Pulse Power Device N-MOS VCS, ThinPakTM

Description
This voltage controlled Solidtron (VCS) discharge switch
utilizes an n-type MOS-Controlled Thyristor mounted on a
ThinPakTM, ceramic "chip-scale" hybrid.
The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
The ThinPak^TM Package is a perforated, metalized ceramic
substrate attached to the silicon using 302^oC solder. An epoxy
underfill is applied to protect the high voltage termination from
debris. All exterior metal surfaces are tinned with 63pb/37sn
solder providing the user with a circuit ready part. It's small
size and low profile make it extremely attractive to high dI/dt
applications where stray series inductance must be kept to a
minimum.
SMCT TA32N14A10
Advanced Pulse Power Device
N-MOS VCS, ThinPak^TM
Package
Gate Return
Bond Area
Gate Bond Area
Cathode Bond Area
Anode
Bond Area
Schematic Symbol
ThinPak^TM
Anode (A)
Features
l 1400V Peak Off-State Voltage
l 32A Continuous Rating
l 4kA Surge Current Capability
l >100kA/uSec dI/dt Capability
l <100nSec Turn-On Delay
l Low On-State Voltage
l MOS Gated Control
l Low Inductance Package
Gate (G)
Gate Return (GR)
Cathode (K)
Absolute Maximum Ratings
Peak Off-State Voltage
Peak Reverse Voltage
Off-State Rate of Change of Voltage Immunity
Continuous Anode Current at 110^oC
Repetitive Peak Anode Current (Pulse Width=1uSec)
Rate of Change of Current
Continuous Gate-Cathode Voltage
Peak Gate-Cathode Voltage
Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State
Maximum Junction Temperature
Maximum Soldering Temperature (Installation)
SYMBOL
V_DRM
V_RRM
dv/dt
I_A110
I_ASM
dI/dt
V_GKS
V_GKM
V_GK(OFF-MIN)
T_JM
VALUE
1400
-5
5000
32
4000
150
+/-20
+/-25
-5
150
260
UNITS
V
V
V/uSec
A
A
kA/uSec
V
V
V
o_C
o_C
This SILICON POWER product is protected by one or more of the following U.S. Patents:
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