SMCTTA32N14A10 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – Advanced Pulse Power Device N-MOS VCS, ThinPakTM

SMCT TA32N14A10
Advanced Pulse Power Device
N-MOS VCS, ThinPak^TM
Performance Characteristics T_J=25^oC unless otherwise specified
Parameters
Symbol
Test Conditions
Min.
Anode to Cathode Breakdown Voltage
Anode-Cathode Off-State Current
V_(BR)
i_D
V_GK=-5, I_A=1mA
V_GE=-5V, V_AK=1200V
1400
T_C=25^oC
T_C=150^oC
Gate-Cathode Turn-On Threshold Voltage
V_GK(TH) V_AK=V_GK, I_AK=1mA
Gate-Cathode Leakage Current
Anode-Cathode On-State Voltage
I_GK(lkg)
V_T
V_GK=+/-20V
I_T=32A, V_GK=+5V
(See Figures 1,2 & 3)
T_C=25^oC
T_C=150^oC
Input Capacitance
Turn-on Delay Time
Rate of Change of Current
C_ISS
t_D(ON)
dI/dt
0.2uF Capacitor Discharge
T_J=25^oC, V_GK= -5V to +5V
Peak Anode Current
Discharge Event Energy
Turn-on Delay Time
Rate of Change of Current
I_P
E_DIS
t_D(ON)
dI/dt
V_AK=800V, RG=4.7Ω
L_S= 7nH (See Figures 4,5 & 6)
0.2uF Capacitor Discharge
T_J=150^oC, V_GK= -5V to +5V
Peak Anode Current
Discharge Event Energy
Junction to Case Thermal Resistance
I_P
V_AK=1200V, RG=4.7Ω
E_DIS ^{LS= 7nH (See Figures 4,5 & 6)}
R_θJC Anode (bottom) side cooled (Note 1.)
4000
Junction to Case Thermal Resistance
R_θJC Cathode-Gate (top) side cooled (Note 2.)
Measurements
Typ. Max. Units
V
<10 100
uA
250 1000
uA
0.7
V
500
nA
1.5 2.0
V
1.3 1.5
V
6
nF
50 100
nS
75
kA/uSec
3500
A
32
mJ
50 100
nS
110
kA/uSec
A
70
0.08
1.5
mJ
o_C/W
o_C/W
Notes:
1. Case Exterior Assumed to be 0.002" of 63sn/37pb solder applied directly to Anode. (See Figure 7.)
2. Case Exterior Assummed to be 0.002" of 63sn/37pb solder applied directly to cathode bond area of thinPak. (See Figure 7.)
Typical Performance Curves (unless otherwise specified)
Figure 1. On-State Characteristics
Figure 2. On-State Characteristics
Figure 3. Predicted High Current On-State Characteristics