PE97632 Datasheet, PDF (5/16 Pages) List of Unclassifed Manufacturers – 3.2 GHz Delta-Sigma modulated Fractional-N Frequency Synthesizer for Low Phase Noise Applications

PE97632
Advance Information
Table 2. Absolute Maximum Ratings
Symbol Parameter/Conditions Min Max
VDD
Supply voltage
VI
Voltage on any input
II
DC into any input
-0.3 4.0
-0.3
VDD +
0.3
-10 +10
IO
DC into any output
-10 +10
Tstg
Storage temperature range -65 150
Units
V
V
mA
mA
°C
Table 3. Operating Ratings
Symbol Parameter/Conditions Min Max Units
VDD
Supply voltage
TA
Operating ambient
temperature range
2.85 3.45
V
-40
85
°C
Table 4. ESD Ratings
Symbol
Parameter/Conditions
VESD
ESD voltage human body model
(Note 1)
Level Units
1000
V
Note 1: Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified in Table 4.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Document No. 70-0205-02 │ www.psemi.com
©2006 Peregrine Semiconductor Corp. All rights reserved.
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