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N32T1630C1E Datasheet, PDF (3/14 Pages) List of Unclassifed Manufacturers – 32Mb Ultra-Low Power Asynchronous CMOS PSRAM
NanoAmp Solutions, Inc.
N32T1630C1E
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.2 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.2 to 3.6
V
Power Dissipation
PD
1
W
Storage Temperature
TSTG
–65 to 125
oC
Operating Temperature
TA
-25 to +85
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Comments
Min.
Typ1
Max. Unit
Supply Voltage
VCC
2.7
3.0
3.3
V
Supply Voltage for I/O
VCCQ
2.7
3.0
3.3
V
Input High Voltage
VIH
0.8VCCQ
VCC+0.2 V
Input Low Voltage
VIL
–0.2
0.2VCCQ V
Output High Voltage
VOH
IOH = -0.5mA
0.8VCCQ
V
Output Low Voltage
VOL
IOL = 0.5mA
0.2VCCQ V
Input Leakage Current
ILI
VIN = 0 to VCC
-1
1
µA
Output Leakage Current
ILO OE = VIH or Chip Disabled
-1
1
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=VCCMAX, VIN=VIH / VIL
Chip Enabled, IOUT = 0
3
mA
Read/Write Operating Supply Current
@ Min Cycle Time2
ICC2
VCC=VCCMAX, VIN=VIH / VIL
Chip Enabled, IOUT = 0
25
mA
Standby Current
Chip deselected, CE>VCC-
ISB 0.2, ZZ>VCC-0.2 and VIN =
0 or VCC
120 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
(DOC # 14-02-006 Rev C ECN 01-1040
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.