N32T1630C1E Datasheet, PDF (12/14 Pages) List of Unclassifed Manufacturers – 32Mb Ultra-Low Power Asynchronous CMOS PSRAM

NanoAmp Solutions, Inc.
N32T1630C1E
VAR Update and Deep Sleep Timings
Item
ZZ low to WE low
Deep Sleep Mode
Deep Sleep Recovery
Symbol
t_ZZWE
t_ZZMIN
t_R
Min Max
1
10
200
Unit
us
us
us
Address Patterns for PAR (A3 = 0, A4 = 1)
A2 A1 A0
Active Section
0 1 1 One-quarter of die
0 1 0 One-half of die
x 0 0 Full die
1 1 1 One-quarter of die
1 1 0 One-half of die
Address space
Size
000000h - 07FFFFh 512Kb x 16
000000h - 0FFFFFh 1Mb x 16
000000h - 1FFFFFh 2Mb x 16
180000h - 1FFFFFh 512Kb x 16
100000h - 1FFFFFh 1Mb x 16
Density
8Mb
16Mb
32Mb
8Mb
16Mb
Address Patterns for RMS (A3 = 1, A4 = 1)
A2 A1 A0
Active Section
Address space
Size
0 1 1 One-quarter of die 000000h - 07FFFFh 512Kb x 16
0 1 0 One-half of die
000000h - 0FFFFFh 1Mb x 16
1 1 1 One-quarter of die 180000h - 1FFFFFh 512Kb x 16
1 1 0 One-half of die
100000h - 1FFFFFh 1Mb x 16
Density
8Mb
16Mb
8Mb
16Mb
Low Power ICC Characteristics
Item
Symbol
Test
Array
Partition
PAR Mode Standby ^IPAR
Current
RMS Mode
Standby Current
I_RMSSB
Deep Sleep Current ^IZZ
V_IN = V_CC or 0V,
Chip Disabled, t_A= 85^oC
V_IN = V_CC or 0V,
Chip Disabled, t_A= 85^oC
V_IN = V_CC or 0V,
Chip in ZZ mode, t_A= 85^oC
1/4 Array
1/2 Array
4Mb Device
8Mb Device
Typ Max Unit
75 uA
90
75 uA
90
10 uA
(DOC # 14-02-006 Rev C ECN 01-1040
12
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.