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| BC856 Datasheet, PDF (3/3 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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BC856
BC858
BC860
BC857
BC859
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Static
Group VI
Forward
Current Ratio
SYMBOL
hFE
Min
Typ
Max
BC856
75
110
150
BC857
75
110
150
BC858
75
110
150
BC859
Â
Â
Â
BC860
Â
Â
Â
UNIT CONDITIONS.
IC=-2mA,
VCE=-5V
Group A hFE Typ 90 90 90 Â
Â
Min
125
Typ
180
Max
250
IC=-0.01mA,VCE=-5V
IC=-2mA,
VCE=-5V
Group B hFE
Typ 120 120 120
Typ
150
Min
220
Typ
290
Max
475
ÂÂ
IC=-100mA,VCE=-5V
IC=-0.01mA,VCE=-5V
IC=-2mA,
VCE=-5V
Group C hFE
Typ 200 200 200 Â Â
Typ. Â 270 270 270 270
Min  420 420 420 420
Typ  500 500 500 500
Max  800 800 800 800
IC=-100mA,VCE=-5V
IC=-0.01mA,
VCE=-5V
IC=-2mA,
VCE=-5V
Transition Frequency fT
Typ   400  Â
IC=-100mA,VCE=-5V
Typ 150 150 150 300 300 MHz IC=-10mA,VCE=-5V
f=100MHz
Collector-Base
Capacitance
Cobo Typ
4.5
pF VCB=-10V,
f=1MHz
Spice parameter data is available upon request for these devices
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