BC856 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistors

SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A–3A BC858C–3L
BC856B–Z3B BC859A–Z4A
BC857A–Z3E BC859B–4B
BC857B–3F BC859C–Z4C
BC857C–3G BC860A–Z4E
BC858A–3J BC860B–4F
BC858B–3K BC860C–4GZ
COMPLEMENTARY TYPES
BC856
BC846
BC857
BC847
BC858
BC848
BC859
BC849
BC860
BC850
BC856
BC858
BC860
BC857
BC859
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Base Current
Power Dissipation at T_amb=25°C
Operating and Storage
Temperature Range
SYMBOL
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_EM
I_BM
I_EM
P_tot
T_j:T_stg
BC856
-80
-80
-65
BC857 BC858 BC859
-50
-30
-30
-50
-30
-30
-45
-30
-30
-5
-100
-200
-200
-200
330
-55 to +150
BC860
-50
-50
-45
UNIT
V
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
BC856 BC857 BC858 BC859 BC860 UNIT CONDITIONS.
Collector Cut-Off Current I_CBO Max
-15
nA V_CB = -30V
Max
-4
µA V_CB = -30V
Tamb=150°C
Collector-Emitter
Saturation Voltage
V_CE(sat) Typ -75 -75 -75 -75 -75 mV
Max. -300 -300 -300 -250 -250
Typ
Max.
-250
mV
-650
Typ
Max.
-300
mV
-600
I_C=-10mA,
I_B=-0.5mA
I_C=-100mA,
I_B=-5mA
I_C=-10mA*
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
V_{BE(sat) Typ}
Typ
V_{BE Min}
Typ
Max
-700
mV
-850
mV
-600 -600 -600 -580 -580 mV
-650 -650 -650 -650 -650
-750 -750 -750 -750 -750
I_C=-10mA,
I_B=-0.5mA
I_C=-100mA,
I_B=-5mA
I_C=-2mA
V_CE=-5V
Max
-820
mV I_C=-10mA
V_CE=-5V
* Collector-Emitter Saturation Voltage at I_C = 10mA for the characteristics going through the
operating point I_C = 11mA, V_CE = 1V at constant base current.