BC856 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose transistors

BC856
BC858
BC860
BC857
BC859
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Noise Figure
SYMBOL
N
Typ
Max
BC856
2
10
BC857 BC858 BC859 BC860
2211
10 10 4 4
UNIT CONDITIONS.
dB V_CB = -5V,
dB I_C=-200µA, R_G=2kΩ,
f=1kHz, ∆f=200Hz
Typ
–
–
– 1.2 1 dB V_CB = -5V,
Max –
–
–
4
3 dB I_C=-200µA, R_G=2kΩ,
f=30Hz to 15kHz at
-3dB points
Equivalent Noise
Voltage
e_n
Max –
–
– 110 110 nV V_CB = -5V,
I_C=-200µA, R_G=2kΩ,
f=10Hz to 50Hz at
-3dB points
Dynamic Group VI h_ie
Characteristics
Group A
Min 0.4 0.4 0.4 –
Typ 1.2 1.2 1.2 –
Max 2.2 2.2 2.2 –
Min
1.6
Typ
2.7
Max
4.5
– kΩ
– kΩ
– kΩ
kΩ
kΩ
kΩ
Group B
Group C
Group VI h_re
Group A
Group B
Group C
Min
Typ
Max
3.2
kΩ
4.5
kΩ
8.5
kΩ
Min –
Typ –
Max –
– 6 6 6 kΩ
– 8.7 8.7 8.7 kΩ
– 15 15 15 kΩ
Typ 2.5 2.5 2.5 –
– x10^-4
Typ 1.5 1.5 1.5 1.5 1.5 x10^-4
Typ
2
2
2
2
2 x10^-4
Typ
3
3
3 x10^-4
Group VI h_fe
Min 75 75 75 –
–
Typ 110 110 110 – –
Max 150 150 150 – –
Group A
Min
125
Typ
220
Max
260
V_CE=-5V
Ic=-2mA
f=1kHz
Group B
Min
Typ
240
330
Max
500
Group C
Min – 450 450 450 450
Typ – 600 600 600 600
Max – 900 900 900 900
Group VI h_oe Typ 20 20 20 –
Max 40 40 40 –
– µs
– µs
Group A
Typ
Max
18
µs
30
µs
Group B
Typ
Max
30
µs
60
µs
Group C
Typ –
Max –
– 60 60 60 µs
– 110 110 110 µs