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HAL506 Datasheet, PDF (22/44 Pages) List of Unclassifed Manufacturers – Hall Effect Sensor Family | |||
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HAL505
4.5. HAL 505
The HAL 505 is a latching sensor (see Fig. 4â17).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
does not change if the magnetic field is removed. For
changing the output state, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
â switching type: latching
â low sensitivity
â typical BON: 13.5 mT at room temperature
â typical BOFF: â13.5 mT at room temperature
â operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
â typical temperature coefficient of magnetic switching
points is â1000 ppm/K
Applications
The HAL 505 is the optimal sensor for applications with
alternating magnetic signals such as:
â multipole magnet applications,
â rotating speed measurement,
â commutation of brushless DC motors, and
â window lifter.
Output Voltage
VO
BHYS
VOL
BOFF
0
BON
B
Fig. 4â17: Definition of magnetic switching points for
the HAL 505
Magnetic Characteristics at TJ = â40 °C to +170 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
â40 °C
25 °C
100 °C
140 °C
170 °C
On point BON
Min. Typ. Max.
11.8 15
18.3
11
13.5 17
10.2 12.4 16.6
9.7
12
16.3
9.4
11.7 16.1
Off point BOFF
Min. Typ. Max.
Hysteresis BHYS
Min. Typ. Max.
â18.3 â15
â11.8 26
30
34
â17
â13.5 â11
24
27
32
â16.6 â12.4 â10.2 22
24.8 31.3
â16.3 â12
â9.7 21
24.2 31.3
â16.1 â11.7 â9.4 20
23.4 31.3
Magnetic Offset
Unit
Min. Typ. Max.
0
mT
â1.5 0
1.5 mT
0
mT
0
mT
0
mT
The hysteresis is the difference between the switching points BHYS = BON â BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
22
Micronas
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