EN29F040 Datasheet, PDF (21/32 Pages) List of Unclassifed Manufacturers – 4 Megabit (512K x 8-bit) Flash Memory

EN29F040
Table 7. DC Characteristics
(T_a = 0°C to 70°C or - 40°C to 85°C; V_CC = 5.0V ± 10%)
Symbol
Parameter
Test Conditions
Min
Max
Unit
I_LI
Input Leakage Current
I_LO
Output Leakage Current
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
±5
µA
±5
µA
I_CC1
Supply Current (read) TTL Byte
CE = V_IL; OE = V_IH;
f = 6MHz
30
mA
I_CC2
I_CC3
I_CC4
V_IL
V_IH
V_OL
V_OH
V_ID
I_LIT
V_LKO
Supply Current (Standby) TTL
CE = V_IH
1.0
MA
Supply Current (Standby) CMOS
Supply Current (Program or Erase)
CE = Vcc ± 0.3V
Byte program, Sector or Chip
Erase in progress
5.0
µA
30
mA
Input Low Voltage
-0.5
0.8
V
Input High Voltage
2
Vcc +
0.5
V
Output Low Voltage
I_OL = 2 mA
0.45
V
Output High Voltage TTL
I_OH = -2.5 mA
2.4
V
Output High Voltage CMOS
I_OH = -100 µA
Vcc -
0.4V
V
A9 Voltage (Electronic Signature)
10.5
11.5
V
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
A9 = VID
100
µA
3.2
4.2
V
4800 Great America Parkway, Suite 202
21
Santa Clara, CA 95054
Rev. D, Issue Date: 2001/07/05
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