EN29F080 Datasheet, PDF (20/37 Pages) List of Unclassifed Manufacturers – 8 Megabit (1024K x 8-bit) Flash Memory

Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
EN29F080
Symbol
I_LI
I_LO
I_CC1
I_CC2
I_CC3
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL Byte
Supply Current (Standby) TTL
Supply Current (Standby) CMOS⁽¹⁾
I_CC4
V_IL
V_IH
V_OL
V_OH
V_ID
I_LIT
V_LKO
Supply Current (Program or Erase)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
Test Conditions
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE = V_IL; OE = V_IH;
f = 6MHz
CE = V_IH
RESET# = CE# =
Vcc ± 0.2V
Byte program, Sector or
Chip Erase in progress
I_OL = 2 mA
I_OH = -2.5 mA
I_OH = -100 µA
A9 = VID
Min
Max
Unit
±5
µA
±5
µA
30
mA
1.0
mA
5.0
µA
30
mA
-0.5
0.8
V
2
Vcc ± 0.5 V
0.45
V
2.4
V
Vcc - 0.4V
V
10.5
11.5
V
100
µA
3.2
4.2
V
Notes:
(1) RESET# pin input buffer is always enabled so that it draws power if not at full CMOS supply voltages
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Rev. C, Issue Date: 2001/07/05
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