EN29F080 Datasheet, PDF (1/37 Pages) List of Unclassifed Manufacturers – 8 Megabit (1024K x 8-bit) Flash Memory

EN29F080
8 Megabit (1024K x 8-bit) Flash Memory
EN29F080
FEATURES
• 5.0V ± 10%, single power supply operation
- Minimizes system level power requirements
• Manufactured on 0.35 µm process technology
• High performance
- Access times as fast as 45 ns
• Low power consumption
- 25 mA typical active read current
- 30 mA typical program/erase current
- 1 µA typical standby current (standard access
time to active mode)
• Flexible Sector Architecture:
- 16 uniform sectors of 64Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Group sector protection:
Hardware method of locking of sector groups
to prevent any program or erase operations
within that sector group
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors
• High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 16s typical
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
• Low Power Active Current
- 30mA active read current
- 30mA program/erase current
• JEDEC Standard program and erase
commands
• JEDEC standard DATA polling and toggle
bits feature
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• 0.35 µm double-metal double-poly
triple-well CMOS Flash Technology
• Low Vcc write inhibit < 3.2V
• >100K program/erase endurance cycle
• Ready/Busy# output (RY/BY#)
- Provides a hardware method for detecting
program or erase cycle completion.
• Hardware reset pin (Reset#)
- Resets internal state machine to read mode
GENERAL DESCRIPTION
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized
into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of
64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F080 features 5.0V
voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT
states in high-performance microprocessor systems.
The EN29F080 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E )
controls, which eliminate bus contention issues. This device is designed to allow either single (or
multiple) Sector or full chip erase operation, where each Sector can be individually protected against
program/erase operations or temporarily unprotected to erase or program. The device can sustain a
minimum of 100K program/erase cycles on each Sector.
4800 Great America Parkway, Suite 202
1
Santa Clara, CA 95054
Rev. C, Issue Date: 2001/07/05
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