HAL571 Datasheet, PDF (15/20 Pages) List of Unclassifed Manufacturers – Two-Wire Hall Effect Sensor Family

ADVANCE INFORMATION
HAL575
4.4. HAL 575
The HAL 575 is a medium sensitive latching switching
sensor (see Fig. 4–4).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low consumption with the magnetic north
pole on the branded side. The current consumption does
not change if the magnetic field is removed. For chang-
ing the current consumption, the opposite magnetic field
polarity must be applied.
For correct functioning in the application, the sensor re-
quires both magnetic polaritys on the branded side of the
package.
Magnetic Features:
– switching type: latching
– medium sensitivity
– typical B_ON: 4 mT at room temperature
– typical B_OFF: –4 mT at room temperature
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL 575 is designed for applications with both mag-
netic polaritys and weak magnetic amplitudes at the
sensor position such as:
– applications with large airgap or weak magnets,
– multipole magnet applications,
– contactless solutions to replace micro switches,
– rotating speed measurement.
Current consumption
I_DDhigh
B_HYS
I_DDlow
B_OFF
0
B_ON
B
Fig. 4–4: Definition of magnetic switching points for
the HAL 575
Magnetic Characteristics at T_J = –40 °C to +140 °C, V_DD = 3.75 V to 24 V,
Typical Characteristics for V_DD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
T_J
–40 °C
25 °C
100 °C
140 °C
On point B_ON
Min. Typ. Max.
0.5
4
8
0.5
4
8
0.5
4
8
tbd
–
tbd
Off point B_OFF
Min. Typ. Max.
–8
–4
–0.5
–8
–4
–0.5
–8
–4
–0.5
tbd
–
tbd
Hysteresis B_HYS
Min. Typ. Max.
5
8
11
5
8
11
5
8
11
tbd
–
tbd
Magnetic Offset
Unit
Min. Typ. Max.
0
mT
0
mT
0
mT
tbd
mT
The hysteresis is the difference between the switching points B_HYS = B_ON – B_OFF
The magnetic offset is the mean value of the switching points B_OFFSET = (B_ON + B_OFF) / 2
Micronas
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