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HAL571 Datasheet, PDF (13/20 Pages) List of Unclassifed Manufacturers – Two-Wire Hall Effect Sensor Family
ADVANCE INFORMATION
HAL573
4.2. HAL 573
The HAL 573 is a low sensitive unipolar switching sensor
(see Fig. 4–2).
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the package
and turns to low current consumption if the magnetic
field is removed. It does not respond to the magnetic
north pole on the branded side.
For correct functioning in the application, the sensor re-
quires only the magnetic south pole on the branded side
of the package.
Magnetic Features:
– switching type: unipolar
– low sensitivity
– typical BON: 43.5 mT at room temperature
– typical BOFF: 41.5 mT at room temperature
– typical temperature coefficient of magnetic switching
points is –1100 ppm/K
– operates with static magnetic fields and dynamic mag-
netic fields up to 10 kHz
Applications
The HAL 573 is designed for applications with one mag-
netic polarity and weak magnetic amplitudes at the sen-
sor position such as:
– applications with large airgap or weak magnets,
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
Current consumption
IDDhigh
BHYS
IDDlow
0
BOFF
BON
B
Fig. 4–2: Definition of magnetic switching points for
the HAL 573
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
–40 °C
25 °C
100 °C
140 °C
On point BON
Min. Typ. Max.
40.2 45.7 51.2
38
43.5 49
34
40
46
tbd
–
tbd
Off point BOFF
Min. Typ. Max.
38.2 43.7 49.2
36
41.5 47
32
38
44
tbd
–
tbd
Hysteresis BHYS
Min. Typ. Max.
0.5
2
4
0.5
2
4
0.5
2
4
tbd
–
tbd
Magnetic Offset
Unit
Min. Typ. Max.
44.7
mT
42.5
mT
39
mT
tbd
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
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