MEM4X16E43VTW-5 Datasheet, PDF (1/24 Pages) List of Unclassifed Manufacturers – 4 MEG x 16 EDO DRAM

EDO DRAM
4 MEG x 16
EDO DRAM
4X16E43V
FEATURES
• Single +3.3V ±0.3V power supply
• Industry-standard x16 pinout, timing, functions,
and package
• 12 row, 10 column addresses (4)
13 row, 9 column addresses (8)
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH
distributed across 64ms
• Self refresh for low-power data retention
OPTIONS
• Plastic Package
50-pin TSOP (400 mil)
• Timing
50ns access
60ns access
• Refresh Rates
4K
8K
MARKING
TW
-5
-6
4
8
• Operating Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
None
IT
NOTE: 1. The “#” symbol indicates signal is active LOW.
PIN ASSIGNMENT (Top View)
50-Pin TSOP
VCC
1
DQ0
2
DQ1
3
DQ2
4
DQ3
5
VCC
6
DQ4
7
DQ5
8
DQ6
9
DQ7
10
NC
11
VCC
12
WE#
13
RAS#
14
NC
15
NC
16
NC
17
NC
18
A0
19
A1
20
A2
21
A3
22
A4
23
A5
24
VCC
25
50
VSS
49
DQ15
48
DQ14
47
DQ13
46
DQ12
45
VSS
44
DQ11
43
DQ10
42
DQ9
41
DQ8
40
NC
39
VSS
38
CASL#
37
CASH#
36
OE#
35
NC
34
NC
33
NC/A12^†
32
A11
31
A10
30
A9
29
A8
28
A7
27
A6
26
VSS
†_{A12 for "8K" version, NC for "4K" version.}
Configuration
Refresh
Row Address
Column Addressing
4X16E43V
4 Meg x 16
4K
4K (A0-A11)
1K (A0-A9)
4X16E83V
4 Meg x 16
8K
8K (A0-A12)
512 (A0-A8)
Part Number Example:
MEM4X16E43VTW-5
KEY TIMING PARAMETERS
SPEED
-5
-6
t_RC
84ns
104ns
t_RAC
50ns
60ns
t_PC
20ns
25ns
t_AA
25ns
30ns
t_CAC
13ns
15ns
t_CAS
8ns
10ns
4 MEG x 16 EDO DRAM PART NUMBERS
PART NUMBER
4X16E43VTW-x
4X16E83VTW-x
x = speed
REFRESH
ADDRESSING
4
8
PACKAGE
400-TSOP
400-TSOP
1