M52L64164A_1 Datasheet, PDF (9/47 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M52L64164A
Operation Temperature Condition -40~85°C
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus
10000 0 0
DS
TCSR
PASR
Extended Mode Register Set
PASR
A2-A0
000
001
010
011
100
101
111
WT=0
4Bank
2 Bank (BankA& BankB) or
(BA1=0)
1 Bank (BankA) or
(BA0=BA1=0)
R
R
1/2 Bank (BankA) or
A11=BA0=BA1=0
R
A6-A5
Driver Strength
00
Full Strength
DS
01
1/2 Strength
10
1/4 Strength
11
R
Remark R : Reserved
EXTENDED MODE REGISTER SET (EMRS)
The extended mode register stores for selecting PASR;TCSR;DS. The extended mode register set must be done before any active
command after the power up sequence. The extended mode register is written by asserting low on CS,RAS,CAS,WE and high on
BA1,low on BA0(The SDRAM should be in all bank precharge with CKE already high prior to writing into the extended more
register). The state of address pins
A0~An in the same cycle as CS,RAS,CAS,WE going low is written in the extended mode register. Refer to the table for specific
codes.
The extended mode register can be changed by using the same command and clock cycle requirements during operations as long
as all banks are in the idle state. The default value extended mode register is defined as half driving strength and all banks
refreshed.
Elite Semiconductor Memory Technology Inc.
Publication Date: Sep. 2008
Revision: 1.1
9/47