M52L64164A_1 Datasheet, PDF (1/47 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
Mobile SDRAM
FEATURES
y 3.3V power supply
y LVTTL compatible with multiplexed address
y Four banks operation
y MRS cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
y EMRS cycle with address
y All inputs are sampled at the positive going edge of the
system clock
y Special function support
- PASR (Partial Array Self Refresh)
- TCSR (Temperature Compensated Self Refresh)
- DS (Driver Strength)
y DQM for masking
y Auto & self refresh
y 64ms refresh period (4K cycle)
M52L64164A
Operation Temperature Condition -40~85°C
1M x 16 Bit x 4 Banks
Synchronous DRAM
ORDERING INFORMATION
PRODUCT NO.
M52L64164A-6TIG
M52 L64164A-7TIG
M52L64164A-6BIG
M52L64164A-7BIG
MAX
FREQ.
PACKAGE Comments
166MHz 54 Pin TSOP II Pb-free
143MHz 54 Pin TSOP II
166MHz 54 Ball BGA
143MHz 54 Ball BGA
Pb-free
Pb-free
Pb-free
GENERAL DESCRIPTION
The M52L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by
16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high performance memory system applications.
PIN ASSIGNMENT (Top View)
VDD 1
DQ0 2
VDDQ 3
DQ1 4
DQ2 5
VSSQ 6
DQ3 7
DQ4 8
VDDQ 9
DQ5 10
DQ6 11
VSSQ 12
DQ7 13
VDD 14
LDQM 15
WE 16
CAS 17
RAS 18
CS 19
BA0 20
BA1 21
A10/AP 22
A0 23
A1 24
A2 25
A3 26
VDD 27
54 VSS
53 DQ15
52 VSSQ
51 DQ14
50 DQ13
49 VDDQ
48 DQ12
47 DQ11
46 VSSQ
45 DQ10
44 DQ9
43 VDDQ
42 DQ8
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
1
2
3
4
5
6
7
8
9
A
VSS DQ15 VSSQ
VDDQ DQ0 VDD
B
DQ14 DQ13 VDDQ
C
DQ12 DQ11 VSSQ
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
D
DQ10 DQ9 VDDQ
VSSQ DQ6 DQ5
E
DQ8 NC
VSS
VDD LDQM DQ7
F
UDQM CLK CKE
G
NC
A11
A9
CAS
RAS
WE
BA0 BA1
CS
H
A8
A7
A6
J
VSS
A5
A4
A0
A1
A10
A3
A2
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date: Sep. 2008
Revision: 1.1
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