M52L64164A_1 Datasheet, PDF (6/47 Pages) Elite Semiconductor Memory Technology Inc. – 1M x 16 Bit x 4 Banks Synchronous DRAM

ESMT
M52L64164A
Operation Temperature Condition -40~85°C
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
CAS Latency =3
CLK cycle time
CAS Latency =2
CLK to valid
output delay
CAS Latency =3
CAS Latency =2
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in CAS Latency =3
Hi-Z
CAS Latency =2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
-6
Min
Max
6
1000
10
5.5
6
2.5
2.5
2.5
1.5
1
0
5.5
6
-7
Min
Max
7
1000
10
6
6
2.5
2.5
2.5
1.5
1
0
6
6
Unit Note
ns
1
ns
1
ns
2
ns
3
ns
3
ns
3
ns
3
ns
2
ns
-
*All AC parameters are measured from half to half.
Note: 1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Sep. 2008
Revision: 1.1
6/47