M24L216128DA Datasheet, PDF (6/14 Pages) Elite Semiconductor Memory Technology Inc. – 2-Mbit (128K x 16) Pseudo Static RAM

ESMT
M24L216128DA
Switching Characteristics Over the Operating Range (continued)[10]
Parameter
t_PWE
t_BW
t_SD
t_HD
t_HZWE
t_LZWE
Description
WE Pluse Width
BLE / BHE LOW to Write End
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High-Z[11, 12]
WE HIGH to Low-Z[11, 12]
-55
-70
Unit
Min.
Max. Min. Max.
40
55
ns
50
55
ns
25
25
ns
0
0
ns
25
25
ns
5
5
ns
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]
Read Cycle 2 ( OE Controlled)[14, 16]
Notes:
15. Device is continuously selected. OE , CE1 = V_IL and CE2 = V_IH.
16. WE is HIGH for Read Cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
6/14