M24L216128DA Datasheet, PDF (4/14 Pages) Elite Semiconductor Memory Technology Inc. – 2-Mbit (128K x 16) Pseudo Static RAM

ESMT
M24L216128DA
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature ...................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential . .................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ...............................20 mA
Static Discharge Voltage ........................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient
Temperature (T_A)
−25°C to +85°C
−40°C to +85°C
V_CC
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
V_CC
Supply Voltage
V_OH
Output HIGH
Voltage
I_OH = −0.1 mA
V_OL
Output LOW
Voltage
I_OL = 0.1 mA
V_IH
Input HIGH
Voltage
V_IL
Input LOW Voltage
I_IX
Input Leakage
Current
f=0
GND ≤V_IN ≤ V_CC
I_OZ
Output Leakage
Current
GND ≤ V_OUT ≤ V_CC, Output Disabled
I_CC
V_CC Operating
Supply Current
f = f_MAX = 1/t_RC
f = 1 MHz
V_CC = 3.6V
I_OUT = 0mA
CMOS levels
Automatic CE1
CE1 ≥V_CC − 0.2V, CE2 ≤ 0.2V, V_IN ≥
I_SB1
Power-Down
Current
V_CC − 0.2V, V_IN ≤ 0.2V, f = f_MAX
(Address and Data Only), f = 0 ( OE ,
—CMOS Inputs
WE , BHE and BLE ), V_CC=3.6V
I_SB2
Automatic CE1
Power-Down
Current
—CMOS Inputs
CE1 ≥ V_CC−0.2V, CE2 ≤ 0.2V
V_IN ≥ V_CC − 0.2V or V_IN ≤ 0.2V,
f = 0, V_CC =3.6V
Min.
2.7
V_CC-
0.4
0.8*
V_CC
-0.4
-1
-1
-55
Typ
.[5]
Max.
3.0 3.6
Min.
2.7
V_CC-
0.4
-70
Typ.
[5]
3.0
Max.
3.6
0.4
0.4
V_CC+ 0.8*
0.4V V_CC
0.4 -0.4
V_CC+0
.4V
0.4
+1 -1
+1
+1 -1
+1
14 22
8
15
1
5
1
5
40 250
40 250
9 40
9
40
Unit
V
V
V
V
V
µA
µA
mA
µA
µA
Capacitance[9]
Parameter
Description
C_IN
C_OUT
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz
V_CC = V_CC(typ)
Max.
Unit
8
pF
8
pF
Thermal Resistance[9]
Parameter Description
Test Conditions
ΘJA
Thermal Resistance(Junction to Ambient) Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/ JESD51.
ΘJC
Thermal Resistance (Junction to Case)
Notes:
6.V_IH(MAX) = V_CC + 0.5V for pulse durations less than 20 ns.
7.V_IL(MIN) = –0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after any design or process changes that may affect these parameters.
BGA
55
17
Unit
°C/W
°C/W
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2008
Revision : 1.2
4/14